PART |
Description |
Maker |
BGA318 Q62702-G0043 |
From old datasheet system Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器(级0瓦,增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫) Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
CGY1043 |
1 GHz, 23 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
CGY1043 |
1 GHz - 23 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
HMC742HFLP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 4 GHz
|
Hittite Microwave Corporation
|
313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
美国讯泰微波有限公司上海代表
|
HMC31307 313E |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
AA035P3-00 AA038N3-00 |
37-40 GHz GaAs MMIC low noise amplifier 31-35 GHz GaAs MMIC Driver Amplifier 315 GHz GaAs MMIC Driver Amplifier
|
Alpha Industries Inc
|
AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
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Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|